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Grekhov Igor' Vsevolodovich

Publications in Math-Net.Ru

  1. Avalanche breakdown in 4$H$-SiC Schottky diodes: reliability aspects

    Zhurnal Tekhnicheskoi Fiziki, 90:12 (2020),  2133–2138
  2. Numerical and experimental study of an optimized $p$-SOS diode

    Zhurnal Tekhnicheskoi Fiziki, 89:3 (2019),  409–415
  3. Influence of dopant incomplete ionization on the capacitance of a reverse-biased 4H-SiC $p^{+}$–$i$–$n^{+}$ diode

    Zhurnal Tekhnicheskoi Fiziki, 88:6 (2018),  955–958
  4. Generation of high-voltage pulses by sharp-recovery SiC drift diodes ($n$-base versus $p$-base diodes)

    Zhurnal Tekhnicheskoi Fiziki, 88:1 (2018),  89–92
  5. Experimental observation of delayed impact-ionization avalanche breakdown in semiconductor structures without $p$–$n$ junctions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018),  66–73
  6. The numerical simulation of the nanosecond switching of a $p$-SOS diode

    Zhurnal Tekhnicheskoi Fiziki, 87:12 (2017),  1790–1793
  7. Analysis of integrated thyristor switching-off by a reverse gate pulse current

    Zhurnal Tekhnicheskoi Fiziki, 87:11 (2017),  1682–1686
  8. High-power subnanosecond silicon avalanche shaper

    Zhurnal Tekhnicheskoi Fiziki, 87:5 (2017),  793–796
  9. Analysis of the process of turning off an integrated thyristor with external MOSFET control

    Zhurnal Tekhnicheskoi Fiziki, 87:1 (2017),  155–158
  10. Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling

    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  467–471
  11. Current–voltage characteristics of high-voltage 4$H$-SiC $p^{+}$–$n_{0}$–$n^{+}$ diodes in the avalanche breakdown mode

    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  390–394
  12. Powerful diode nanosecond current opening switch made of $p$-silicon ($p$-SOS)

    Zhurnal Tekhnicheskoi Fiziki, 86:3 (2016),  106–109
  13. Parameters of pulse generators based on 4H : SiC sharp-recovery drift diodes: The influence of electron drift velocity saturation

    Zhurnal Tekhnicheskoi Fiziki, 86:2 (2016),  85–88
  14. Field dependence of the electron drift velocity along the hexagonal axis of 4$H$-SiC

    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  900–904
  15. Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-$K$-oxide/SiO$_{2}$/Si structure

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  683–688
  16. Resonant electron tunneling and related charging phenomena in metal–oxide–$p^+$-Si nanostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016),  62–69
  17. Parameters of silicon carbide diode avalanche shapers for the picosecond range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:1 (2016),  87–94
  18. Analysis of nanosecond breaking of a high-density current in SOS diodes

    Zhurnal Tekhnicheskoi Fiziki, 85:11 (2015),  104–108
  19. High-voltage sharp-recovery 4H:SiC drift diodes: Theoretical estimation of limiting parameters

    Zhurnal Tekhnicheskoi Fiziki, 85:6 (2015),  111–117
  20. Dynamic characteristics of 4H-SiC drift step recovery diodes

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1558–1562
  21. Anomalous dynamics of the residual voltage across a gallium-arsenide diode upon subnanosecond avalanche switching

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:7 (2015),  1–7
  22. Investigation of the polarization dependence of the transient current in polycrystalline and epitaxial Pb(Zr,Ti)O$_3$ thin films

    Fizika Tverdogo Tela, 56:12 (2014),  2366–2375
  23. The formation of shallow-donor distribution profiles in proton irradiation of silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:23 (2014),  67–73
  24. Subnanosecond avalanche switching in high-voltage silicon diodes with abrupt and graded $p$–$n$ junctions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:8 (2014),  80–87
  25. High-voltage field-controlled integrated thyristor

    Zhurnal Tekhnicheskoi Fiziki, 83:1 (2013),  105–109
  26. Injection ionization mechanism of current instability during switching off an integrated field controlled thyristor

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:23 (2013),  18–25
  27. Spreading resistance microscopy of polycrystalline and single-crystal ferroelectric films

    Fizika Tverdogo Tela, 54:5 (2012),  944–946
  28. Effects of current localization in high-power microgate bipolar switches with nonideal interconnection between controlled cells

    Zhurnal Tekhnicheskoi Fiziki, 82:5 (2012),  57–65
  29. Subnanosecond 4H-SiC diode current breakers

    Fizika i Tekhnika Poluprovodnikov, 46:4 (2012),  544–547
  30. Leakage currents in 4H-SiC JBS diodes

    Fizika i Tekhnika Poluprovodnikov, 46:3 (2012),  411–415
  31. Numerical simulation of spatially nonuniform switching in silicon avalanche sharpening diodes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:11 (2012),  78–87
  32. High-voltage fast diode with “soft” recovery

    Zhurnal Tekhnicheskoi Fiziki, 81:10 (2011),  50–54
  33. I–V characteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier

    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1427–1430
  34. High-voltage (3.3 kV) 4H-SiC JBS diodes

    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  677–681
  35. Modeling of the electrical characteristics of spherical metal-insulator-semiconductor tunnel structures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:21 (2011),  33–40
  36. Triggering of superfast ionization fronts in silicon diode structures by field-enhanced thermionic electron emission from deep centers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:18 (2011),  17–25
  37. Reverse recovery of Si/Si$_{1-x}$Ge$_x$ heterodiodes fabricated by direct bonding

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:13 (2011),  83–89
  38. Electron irradiation controlled profile of recombination center concentration in silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:9 (2011),  105–110
  39. Cascode turn-off of field-controlled integrated thyristors

    Zhurnal Tekhnicheskoi Fiziki, 80:1 (2010),  155–158
  40. Dynamic current localization during turn-off of high-power microgate bipolar switches

    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1577–1583
  41. Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding

    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1135–1139
  42. Excess leakage currents in high-voltage 4H-SiC Schottky diodes

    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  680–683
  43. Increasing the operating frequency in high-power distributed microgate bipolar switches

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:20 (2010),  35–42
  44. Ultrafast turn-off of high currents by field-controlled integrated thyristor

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:19 (2010),  107–111
  45. Nanosecond semiconductor diodes for pulsed power switching

    UFN, 175:7 (2005),  735–744
  46. SHOCK IONIZATION IN TRANSISTORS WITH TUNNEL-THIN MOS-EMITTER

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:21 (1992),  1–5
  47. Ударная ионизация в кремнии в слабых полях

    Fizika i Tekhnika Poluprovodnikov, 25:5 (1991),  885–892
  48. Контроль качества интерфейса методом лазерного сканирования при прямом сращивании кремниевых пластин

    Fizika i Tekhnika Poluprovodnikov, 25:2 (1991),  208–216
  49. SILICON AUGER-TRANSISTOR WITH TUNNEL MOS-EMITTER

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:13 (1991),  44–48
  50. Влияние гидростатического сжатия на рекомбинационные свойства золота в Si

    Fizika i Tekhnika Poluprovodnikov, 24:12 (1990),  2203–2205
  51. CONDUCTING OF DIRECT SILICON FUSION UNDER NON-DUST-FREE AIR MEDIA

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:17 (1990),  61–65
  52. POTENTIAL GENERATION OF STIMULATED RADIATION THROUGH SHOCK-IONIZATION WAVES IN SEMICONDUCTORS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:17 (1990),  9–14
  53. STRAIGHT-LINE OF DIODES PREPARED BY THE SDB (SILICON TO SILICON DIRECT BONDING) METHOD

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990),  6–9
  54. SHOCK IONIZATION OF DEEP LEVEL OF AU IN SI

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:4 (1990),  63–67
  55. FORMING OF R-P TRANSITIONS BY THE SILICON TO SILICON DIRECT BONDING METHOD

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:18 (1989),  59–63
  56. THICK-FILMS IN THE Y-BA-CU-O SYSTEM ON BAF2 SUBSTRATES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:8 (1989),  77–80
  57. Electric conductivity of porous glasses with a carbon filling

    Fizika Tverdogo Tela, 30:6 (1988),  1856–1859
  58. INVERSE VOLTAGE FAST REDUCTION EFFECT ON THE SYMMETRIC P+PNN+-STRUCTURE

    Zhurnal Tekhnicheskoi Fiziki, 58:11 (1988),  2244–2247
  59. FORMATION AND ANNEALING OF RADIATION DEFECTS IN SILICON P-N DIODES WITH LITHIUM ADMIXTURE

    Zhurnal Tekhnicheskoi Fiziki, 58:7 (1988),  1436–1439
  60. POTENTIALITY OF FAST GENERATION OF DENSE ELECTRON-HOLE LARGE-CAPACITY PLASMA IN GALLIUM-ARSENIDE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:23 (1988),  2121–2124
  61. SUPER HIGH-VOLTAGE SILICOR R-P-TRANSITIONS WITH THE BREAKDOWN PRESSURE HIGHER-THAN-20-KV

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:11 (1988),  972–975
  62. OPTIMIZATION OF FREQUENCY AND STATISTIC CHARACTERISTICS OF POWER SEMICONDUCTING DEVICES BY CREATION OF HIGH RECOMBINATION LOCAL ZONES IN BASIC FIELDS

    Zhurnal Tekhnicheskoi Fiziki, 57:10 (1987),  1925–1929
  63. POTENTIALITY OF PREPARATION OF LOW-OMHIM NEITRON-ALLOYED SILICON ON THE RBMK-1000 REACTOR

    Zhurnal Tekhnicheskoi Fiziki, 57:6 (1987),  1127–1129
  64. Heterogeneous current distribution, induced by its magnetic-field, on powerful silicon large diameter semiconducting devices

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:21 (1987),  1318–1322
  65. Formation of high-voltage differential pressure of picosecond range on arsenide-gallium diodes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:18 (1987),  1089–1093
  66. INFLUENCE OF ELECTRODYNAMIC EFFECTS ON THE HOMOGENEITY OF COMMUTATION PROCESSES IN HIGH-SPEED POWERFUL SEMICONDUCTOR-DEVICES

    Zhurnal Tekhnicheskoi Fiziki, 56:9 (1986),  1860–1861
  67. NEUTRON-ALLOYED HIGH-RESISTANT SILICON (NAS) - PRODUCTION AND PROPERTIES

    Zhurnal Tekhnicheskoi Fiziki, 56:6 (1986),  1174–1179
  68. HIGH-POWERED SWITCH-TYPE DEVICE IS A REVERSE-CONTROLLED TRANSISTOR (RCT)

    Zhurnal Tekhnicheskoi Fiziki, 56:2 (1986),  341–345
  69. Fast Ionization Waves in a Semiconductor Related with Superradiation

    Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1335–1337
  70. Main Electric Characteristics of Heterodiodes in the Si$-$Mg$_{(1-x)}$SiP$_{2(1-x)}$ System

    Fizika i Tekhnika Poluprovodnikov, 20:3 (1986),  431–434
  71. Injection capability of the MOS-emitter with tunnel-thin oxide layers during high-current densities

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:19 (1986),  1209–1212
  72. HEAVY-CURRENT MICROSECOND THYRISTOR COMMUTATOR CONTROLLED BY LIGHT-PULSES

    Zhurnal Tekhnicheskoi Fiziki, 55:8 (1985),  1570–1575
  73. Hydrostatic pinch effect on the lifetime of charge nonequilibrium carriers in silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:21 (1985),  1288–1293
  74. Semiconductor powerful subnanosecond commutators with more time retentivity under conducting conditions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:15 (1985),  901–904
  75. Powerful reversely-triggered dinistor of the submegahertz range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:10 (1985),  588–591
  76. HEAT AND CURRENT NONSTATIONARY LOCALIZATION IN DIRECT-BIAS SILICON DIODES

    Zhurnal Tekhnicheskoi Fiziki, 54:9 (1984),  1787–1792
  77. DETERMINATION OF ELECTROPHYSICAL PARAMETERS OF HIGHLY ALLOYED LAYERS IN P(+)-S-N(+)-STRUCTURES

    Zhurnal Tekhnicheskoi Fiziki, 54:8 (1984),  1590–1595
  78. POSSIBILITIES OF INCREASING THERMAL-STABILITY OF SINGLE-CRYSTAL SILICON FOR HIGH-POWER SEMICONDUCTOR-DEVICES

    Zhurnal Tekhnicheskoi Fiziki, 54:5 (1984),  917–928
  79. THERMAL-STABILITY OF SILICON, ALLOYED BY REE ADMIXTURES DURING GROWTH BY THE CHOKHRALSKII METHOD

    Zhurnal Tekhnicheskoi Fiziki, 54:1 (1984),  207–208
  80. Cascade Si$-$AlGaAs Solar Photocells

    Fizika i Tekhnika Poluprovodnikov, 18:1 (1984),  121–125
  81. SUPERHIGH-VOLT P-N-JUNCTIONS BASED ON NEUTRON-ALLOYED SILICON, CONTAINING RARE-EARTH ELEMENTS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:14 (1984),  880–882
  82. POWERFUL SWITCH OF MICROSECOND RANGE - REVERSIBLY SWITCHING ON DINISTOR

    Zhurnal Tekhnicheskoi Fiziki, 53:9 (1983),  1822–1826
  83. POSSIBILITY OF THE IMPROVEMENT OF PARAMETERS OF POWERFUL HIGH-SPEED SILICON DEVICES, AFTER THE IRRADIATION BY CO-60 GAMMA-QUANTA

    Zhurnal Tekhnicheskoi Fiziki, 53:6 (1983),  1143–1146
  84. STUDY OF THE TRANSITION PROCESS OF POWER DIODE SWITCHING WITH CHARGE ACCUMULATIONS

    Zhurnal Tekhnicheskoi Fiziki, 53:4 (1983),  726–729
  85. Начальная стадия развития волн ударной ионизации в перенапряженных $p{-}n$-переходах

    Fizika i Tekhnika Poluprovodnikov, 17:8 (1983),  1380–1385
  86. Рекомбинация через глубокие центры при электронно-дырочном рассеянии в полупроводниках

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:20 (1983),  1275–1278
  87. Транзисторный эффект в двухполюсной $n^{+}pNn^{+}$-структуре при ее импульсном инжекционном возбуждении

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:20 (1983),  1271–1275
  88. Инжекционно-лавинный механизм запуска реверсивно-включаемых динисторов в субмикросекундном диапазоне

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:20 (1983),  1217–1221
  89. Сенсибилизация селективных фотоприемников с помощью твердотельных растворов красителей

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:11 (1983),  695–698
  90. Формирование высоковольтных наносекундных перепадов напряжения на полупроводниковых диодах с дрейфовым механизмом восстановления напряжения

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:7 (1983),  435–439
  91. Новый быстродействующий мощный переключатель — инжекционно-полевой тиристор (ИПТ)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:1 (1983),  18–21
  92. Transverse-discharge copper vapor laser utilizing an optically controlled semiconductor switch

    Kvantovaya Elektronika, 10:1 (1983),  186–189
  93. Multichannel semiconductor nanosecond switch for excitation of copper vapor by a transverse discharge

    Kvantovaya Elektronika, 8:1 (1981),  191–193

  94. Андрей Георгиевич Забродский, к 75-летию со дня рождения

    Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021),  893–894
  95. Aleksandr Aleksandrovich Kaplyanskii (on his 90th birthday)

    UFN, 190:12 (2020),  1343–1344
  96. Andrei Nikolaevich Lagarkov (on his 80th birthday)

    UFN, 189:10 (2019),  1129–1130
  97. In memory of Zhores Ivanovich Alferov

    UFN, 189:8 (2019),  899–900
  98. Robert Arnoldovich Suris (on his 80th birthday)

    UFN, 186:12 (2016),  1381–1382
  99. Andrei Nikolaevich Lagar'kov (on his 70th birthday)

    UFN, 179:8 (2009),  919–920

© Steklov Math. Inst. of RAS, 2026