Pchelyakov Oleg Petrovich

Publications in Math-Net.Ru

1. Optimization of the In$_{0.3}$Ga$_{0.7}$As-layer thickness in a triple-junction In$_{0.3}$Ga$_{0.7}$As/GaAs/In$_{0.5}$Ga$_{0.5}$P solar cell
   
   Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  65–68
2. Formation of a stepped Si(100) surface and its effect on the growth of Ge islands
   
   Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  409–413
3. Comparative analysis of characteristic electron energy loss spectra and inelastic scattering cross-section spectra of Fe
   
   Fizika Tverdogo Tela, 58:5 (2016),  881–887
4. Electron spectroscopy of iron disilicide
   
   Zhurnal Tekhnicheskoi Fiziki, 86:9 (2016),  136–140
5. Layer-by-layer analysis of the thickness distribution of silicon dioxide in the structure SiO$_{2}$/Si(111) by inelastic electron scattering cross-section spectroscopy
   
   Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  344–349
6. On the fine structure of spectra of the inelastic-electron-scattering cross section and the Si surface parameter
   
   Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  435–439
7. Inelastic electron scattering cross-section spectroscopy of Ge$_x$Si$_{1-x}$ nanoheterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 48:2 (2014),  237–241
8. New technique for heterogeneous vapor-phase synthesis of nanostructured metal layers from low-dimensional volatile metal complexes
   
   Zhurnal Tekhnicheskoi Fiziki, 81:9 (2011),  113–118
9. Formation of thin nanostructured layers during heterogeneous gas-phase synthesis from small-size volatile metal complexes on the surface of semiconductors and dielectrics
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:6 (2010),  36–45
10. GaAs epitaxy on Si substrates: modern status of research and engineering
    
    UFN, 178:5 (2008),  459–480
11. Two-band conductivity of ZrO₂ synthesized by molecular beam epitaxy
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 81:11 (2005),  721–723
12. Phonon localization in Ge nanoislands and its manifestation in Raman spectra
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 81:7 (2005),  415–418
13. Resonant Raman scattering in GeSi/Si superlattices with GeSi quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 81:1 (2005),  33–36
14. Phonons in Ge/Si superlattices with Ge quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 73:9 (2001),  521–525
15. Silicon – germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures
    
    UFN, 171:7 (2001),  689–715
16. Molecular beam epitaxy: equipment, devices, technology
    
    UFN, 170:9 (2000),  993–995
17. Phonon spectra of strained $\mathrm{Si}/(\mathrm{Si}:\mathrm{Ge})(111)$ superlattices
    
    Fizika Tverdogo Tela, 34:4 (1992),  1125–1133
18. Quantization of optical phonon spectrum in $\mathrm{Si}$–$\mathrm{Si}_{0.5}\mathrm{Ge}_{0.5}$ superlattices
    
    Fizika Tverdogo Tela, 33:6 (1991),  1695–1698


19. Игорь Георгиевич Неизвестный (к 80-летию со дня рождения)
    
    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  286–287