Makarov Yu N

Publications in Math-Net.Ru

1. Chemiluminescence of a functionalized graphene surface
   
   Optics and Spectroscopy, 130:9 (2022),  1417–1422
2. Studying the sensitivity of graphene for biosensor applications
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020),  3–6
3. Graphene on silicon carbide as a basis for gas- and biosensor applications
   
   Nanosystems: Physics, Chemistry, Mathematics, 9:1 (2018),  95–97
4. Supersensitive graphene-based gas sensor
   
   Zhurnal Tekhnicheskoi Fiziki, 86:3 (2016),  135–139
5. On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena
   
   Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1195–1201
6. Graphene-based biosensors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:14 (2016),  28–35
7. Electrochemical etching of $p$–$n$-GaN/AlGaN photoelectrodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:9 (2016),  80–87
8. Radiation hardness of $n$-GaN Schottky diodes
   
   Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1386–1388
9. Study of the characteristics of ultraviolet light-emitting diodes based on GaN/AlGaN heterostructures grown by chloride-hydride vapor-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 48:2 (2014),  259–264
10. Study of the degradation of the external quantum efficiency of UV LEDs based on AlGaN/GaN heterostructures grown by chloride-hydride vapor-phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:13 (2014),  73–80
11. Fabrication of improved-quality seed crystals for growth of bulk silicon carbide
    
    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  847–851
12. ANALYSIS OF THE GAS-PHASE COMPOSITION IN THE SOURCE ZONE BY THE UV ABSORPTION UNDER THE GAAS GROWING IN THE CHLORIDE GAS-TRANSPORT SYSTEM
    
    Zhurnal Tekhnicheskoi Fiziki, 60:7 (1990),  143–150
13. MATHEMATICAL-MODELING OF PROCESSES IN FLOW GAS-EPITAXIAL REACTORS .2. CONDUCTING THE COMPOSITION OF ALGAAS EPITAXIAL LAYERS IN TRANSITION DOMAINS
    
    Zhurnal Tekhnicheskoi Fiziki, 60:4 (1990),  37–46
14. Mathematical modeling of $\mathrm{GaAs}/\mathrm{AlGaAs}$ structures growth processes in flow gas-epitacsial reactors
    
    Mat. Model., 2:7 (1990),  62–84
15. MATHEMATICAL-MODELING OF NONSTATIONARY MASS-TRANSFER PROCESSES IN GAS-EPITAXIAL REACTOR VOLUME UNDER GROWING THE STRUCTURES BY THE MOS-HYDRIDE TECHNIQUE
    
    Zhurnal Tekhnicheskoi Fiziki, 59:4 (1989),  149–153
16. EXPERIMENTAL AND NUMERICAL STUDY OF THE GROWTH OF GAAS EPITAXIAL LAYERS AND ALGAAS SOLID-SOLUTIONS IN HORIZONTAL REACTOR AT LOW-PRESSURE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:15 (1989),  76–79
17. MATHEMATICAL-MODELING OF PROCESSES IN CHLORIDE GAS-TRANSPORT REACTORS
    
    Zhurnal Tekhnicheskoi Fiziki, 58:6 (1988),  1229–1233
18. MATHEMATICAL-MODELING OF PROCESSES IN FLOW-TYPE GAS-EPITAXIAL REACTORS
    
    Zhurnal Tekhnicheskoi Fiziki, 56:9 (1986),  1700–1708
19. Investigation of factors, determining the thickness homogeneity of gallium-arsenide epitaxial layers in the $Ga(CH_{3})_{3}-As\,H_{3}-H_{2}$ system
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:8 (1986),  506–509
20. Numerical modeling of hyposonic flows of a viscous gas
    
    Dokl. Akad. Nauk SSSR, 280:4 (1985),  827–830
21. Numerical modeling of $Ga\,As$ film growth in flow gas-epitaxial reactors
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:13 (1985),  794–799
22. GAS-DYNAMIC PROCESSES DURING PULSED HEAT RELEASES IN SIGNIFICANTLY SUBSONIC FLOWS OF VISCOUS-GAS
    
    Zhurnal Tekhnicheskoi Fiziki, 54:4 (1984),  846–848