|
|
Publications in Math-Net.Ru
-
Boundary layer method for semiconductor devices modelling
Mat. Model., 3:8 (1991), 63–71
-
Asymptotic investigation of a diode model with strongly alloyed contact regions
Zh. Vychisl. Mat. Mat. Fiz., 31:7 (1991), 1006–1019
-
An asymptotic approach to the synthesis of a semiconductor device
Mat. Model., 1:9 (1989), 43–63
-
On the asymptotic behavior of the solution of a problem on the breakdown of a semiconductor device
Zh. Vychisl. Mat. Mat. Fiz., 29:12 (1989), 1873–1884
-
On an inner transition layer in a problem of the theory of semiconductor films
Zh. Vychisl. Mat. Mat. Fiz., 28:2 (1988), 224–236
-
On the asymptotics in a one-dimensional model of some semiconductor devices
Zh. Vychisl. Mat. Mat. Fiz., 28:1 (1988), 34–51
-
On asymptotic solution of one model of the $(p-n)$-transition
Zh. Vychisl. Mat. Mat. Fiz., 26:2 (1986), 306–311
-
Numerical-asymptotic solution of a nonstationary singularly perturbed problem from the theory of semiconductor devices
Differ. Uravn., 21:8 (1985), 1436–1440
-
A system of integro-differential equations with a small parameter multiplying the derivative of conditionally stable type
Differ. Uravn., 14:8 (1978), 1497–1501
© , 2026