RUS  ENG
Full version
PEOPLE

Komarov Fadei Fadeevich

Publications in Math-Net.Ru

  1. Broadband anti-reflective composite coating: Effect of pulsed laser treatment on optical properties

    Optics and Spectroscopy, 132:6 (2024),  668–674
  2. Te-hyperdoped silicon layers for visible-to-infrared photodiodes

    Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021),  2026–2037
  3. Effect of methods for fabrication of polymer composites with carbon nanotubes on conduction processes

    Zhurnal Tekhnicheskoi Fiziki, 91:3 (2021),  475–483
  4. Resistive switching effect of the structure based on silicon nitride

    Zhurnal Tekhnicheskoi Fiziki, 91:1 (2021),  139–144
  5. Effect of pulsed laser annealing on optical properties of selenium-hyperdoped silicon

    Optics and Spectroscopy, 129:8 (2021),  1037–1047
  6. Nanosecond action of intensive laser radiation on thin TiAlN films

    Optics and Spectroscopy, 128:1 (2020),  144–150
  7. The photoluminescence of nitrogen-implanted silicon nitride films

    Bulletin of the L.N. Gumilyov Eurasian National University. Physics. Astronomy Series, 122:1 (2018),  68–73
  8. Nano- and microstructuring of solids by swift heavy ions

    UFN, 187:5 (2017),  465–504
  9. Effect of Helium ion irradiation on the structure, the phase stability, and the microhardness of TiN, TiAlN, and TiAlYN nanostructured coatings

    Zhurnal Tekhnicheskoi Fiziki, 86:5 (2016),  57–63
  10. Radiation Resistance of high-entropy nanostructured (Ti, Hf, Zr, V, Nb)N coatings

    Zhurnal Tekhnicheskoi Fiziki, 85:10 (2015),  105–110
  11. Effect of thermal processing on the structure and optical properties of crystalline silicon with GaSb nanocrystals formed with the aid of high-doze ion implantation

    Zhurnal Tekhnicheskoi Fiziki, 85:9 (2015),  91–96
  12. Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results

    Zhurnal Tekhnicheskoi Fiziki, 85:9 (2015),  77–85
  13. Spectrometry of the Rutherford backscattering of ions and the Raman scattering of light in GaS single crystals irradiated with 140-keV H$^+_2$ ions

    Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  599–602
  14. Effect of the deposition parameters on the structure and physicochemical properties of protective Al$_2$O$_3$ coatings

    Zhurnal Tekhnicheskoi Fiziki, 83:11 (2013),  142–145
  15. Adhesive strength, superhardness, and the phase and elemental compositions of nanostructured coatings based on Ti–Hf–Si–N

    Fizika Tverdogo Tela, 54:9 (2012),  1764–1771
  16. Effect of mass transfer and segregation on the formation of superhard nanostructured Ti-Hf-N(Fe) catings

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:13 (2012),  57–64
  17. Attenuation of microwave electromagnetic radiation by means of buckypaper

    Zhurnal Tekhnicheskoi Fiziki, 81:11 (2011),  140–145
  18. Micro- and nanocomposite Ti–Al–N/Ni–Cr–B–Si–Fe-based protective coatings: Structure and properties

    Zhurnal Tekhnicheskoi Fiziki, 81:7 (2011),  124–131
  19. Stoichiometry, phase composition, and properties of superhard nanostructured Ti–Hf–Si–N coatings obtained by deposition from high-frequency vacuum-arc discharge

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:13 (2011),  90–97
  20. Defect and track formation in solids irradiated by superhigh-energy ions

    UFN, 173:12 (2003),  1287–1318
  21. Defect-impurity engineering in implanted silicon

    UFN, 173:8 (2003),  813–846
  22. Simulation of impurity diffusion during thermal annealing in the polysilicon-silicon system

    Mat. Model., 9:5 (1997),  68–76
  23. EMISSION LOSSES IN THIN-FILM GAMMA-WAVE-GUIDES

    Zhurnal Tekhnicheskoi Fiziki, 62:8 (1992),  110–116
  24. On the mechanism of ionically crystalization in silicon

    Fizika i Tekhnika Poluprovodnikov, 26:10 (1992),  1841–1844
  25. STUDY OF THE TRANSMISSION OF MULTILAYERED THIN-FILM X-RAY GUIDES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:13 (1991),  82–86
  26. GAMMA-WAVE GUIDE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:6 (1991),  45–49
  27. FLUCTUATIONS OF ION CHARGE STATES - POSSIBLE REASON FOR INCREASE OF SHOOT DISPERSION UNDER HIGH-ENERGY IONIC IMPLANTATION

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:5 (1991),  69–72
  28. MODEL OF BORON ION CHANNELING UNDER THE HIGH-ENERGY ION ALLOYING OF SILICON-CRYSTALS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:23 (1990),  4–8
  29. USE OF MULTILAYERED STRUCTURES AS A TARGET FOR THE GENERATION OF X-RAY QUANTUM COLLIMATED BEAMS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:15 (1990),  43–47
  30. POTENTIALITY OF THE CONSTRUCTION OF X-RAY-RADIATION SOURCES BASED ON THE COMPLETE EXTERNAL REFLECTION EFFECT

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:1 (1990),  57–61
  31. FORMATION OF BETA-SI3N4 HIDDEN LAYER UNDER HIGHLY EFFICIENT ION IRRADIATION (HII) OF SILICONE

    Zhurnal Tekhnicheskoi Fiziki, 59:1 (1989),  200–202
  32. HIGH-ENERGY ION-IMPLANTATION

    Zhurnal Tekhnicheskoi Fiziki, 58:3 (1988),  559–566
  33. FORMATION OF TWINS AND HEXAGONAL MODIFICATION IN SILICON UNDER THE RADIATION WITH INTENSIVE AR+ ION-BEAMS

    Zhurnal Tekhnicheskoi Fiziki, 58:3 (1988),  548–551
  34. RADIATION UNDER CHANNELING ELECTRONS WITH 16.9, 30.5, 54.5-MU-U ENERGY IN DIAMOND

    Zhurnal Tekhnicheskoi Fiziki, 58:1 (1988),  195–197
  35. Experimental investigation of X-ray radiation spectra under fast electron channeling in silicon

    Dokl. Akad. Nauk SSSR, 294:2 (1987),  339–342
  36. Implanted nitrogen-induced phase transformation in niobium layers and the superconducting properties of $\mathrm{Nb}$–$\mathrm{N}$ system

    Fizika Tverdogo Tela, 29:6 (1987),  1660–1664
  37. Residual Defects in Silicon under Implantation of As$^{+}$ Ions in the Self-Annealing Mode

    Fizika i Tekhnika Poluprovodnikov, 21:10 (1987),  1863–1867
  38. Study of the Formation of $\beta$-SiC Monocrystalline Layers on Si by the Method of Highly Intense Ionic Doping

    Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  920–922
  39. “Projector” effect in the Kumakhov radiation

    Dokl. Akad. Nauk SSSR, 289:3 (1986),  603–605
  40. Определение оптимального режима разработки неоднородного по толщине участка нефтяного месторождения

    Issled. Podzemn. Gidromekh., 8 (1986),  84–91
  41. Annealing of Defects and Electric Activation of Impurity in the Process of Highly Intensive Ionic Doping of Silicon

    Fizika i Tekhnika Poluprovodnikov, 20:9 (1986),  1726–1728
  42. Synthesis of Monocrystalline Silicon Carbide by Single-Step Equipment of Highly Intense Ion Doping

    Fizika i Tekhnika Poluprovodnikov, 20:1 (1986),  149–152
  43. FLOODLIGHTING EFFECT IN KUMAKHOV RADIATION

    Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985),  2230–2232
  44. BROADENING THE SPONTANEOUS RADIATION LINES DURING ELECTRON PLANAR CHANNELING

    Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985),  2184–2190
  45. Crystallization and the effect of the annealing macrodefects during the process of high dense ionic implantation of semiconducting crystals

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:18 (1985),  1110–1113
  46. POSSIBILITY OF FLUCTUATION FORMATION OF AMORPHOUS BASE DURING ION METAL ALLOYING

    Zhurnal Tekhnicheskoi Fiziki, 54:9 (1984),  1836–1837
  47. IONIZATION CROSS-SECTION OF INNER ELECTRONS IN MODELS OF RELATIVISTIC BINARY IMPACT

    Zhurnal Tekhnicheskoi Fiziki, 54:8 (1984),  1465–1471
  48. An anomaly in the Kumakhov radiation temperature dependence at axial channeling of electrons

    Dokl. Akad. Nauk SSSR, 272:2 (1983),  346–349
  49. On the method of electron density determination in crystals by the $\delta$-electron yield

    Dokl. Akad. Nauk SSSR, 263:5 (1982),  1123–1125

© Steklov Math. Inst. of RAS, 2026