Vinokurov Dmitry Anatol'evich

Publications in Math-Net.Ru

1. Structural and optical properties of heavily doped Al$_x$Ga$_{1-x}$As$_{1-y}$P$_y$:Mg alloys produced by metal-organic chemical vapor deposition
   
   Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1123–1131
2. Structure and optical properties of heterostructures based on MOCVD (Al$_x$Ga$_{1-x}$As$_{1-y}$P$_y$)$_{1-z}$Si$_z$ alloys
   
   Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  23–31
3. AlGaAs/GaAs diode lasers (1020–1100 nm) with an asymmetric broadened single transverse mode waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1082–1086
4. 850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure
   
   Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1078–1081
5. Properties of epitaxial (Al$_x$Ga$_{1-x}$As)$_{1-y}$C$_y$ alloys grown by MOCVD autoepitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  9–14
6. Superstructured ordering in Al$_x$Ga$_{1-x}$As and Ga$_x$In$_{1-x}$P alloys
   
   Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  3–8
7. 850-nm diode lasers based on AlGaAsP/GaAs heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1344–1348
8. Radiative and nonradiative recombination in the active layers of high-power InGaAs/GaAs/AlGaAs laser diodes
   
   Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1339–1343
9. Temperature dependence of the threshold current density in semiconductor lasers ($\lambda$ = 1050–1070 nm)
   
   Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1234–1238
10. Thermal delocalization of carriers in semiconductor lasers ($\lambda$ = 1010–1070 nm)
    
    Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1230–1233
11. Structural and spectral features of MOCVD Al$_x$Ga$_y$In$_{1-x-y}$As$_z$P$_{1-z}$/GaAs (100) alloys
    
    Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  739–750
12. High-order diffraction gratings for high-power semiconductor lasers
    
    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  252–257
13. Analysis of quenching conditions of Fabry–Perot mode lasing in semiconductor stripe-contact lasers
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1431–1438
14. Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1417–1421
15. Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate
    
    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1274–1278
16. Effect of silicon on relaxation of the crystal lattice in MOCVD–hydride Al$_x$Ga$_{1-x}$As (100) heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  488–499
17. InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate
    
    Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1640–1644
18. Relaxation of crystal lattice parameters and structural ordering in In$_x$Ga$_{1-x}$As epitaxial alloys
    
    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1140–1146
19. Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers
    
    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  833–836
20. Temperature delocalization of charge carriers in semiconductor lasers
    
    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  688–693
21. A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD
    
    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  251–255
22. Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide
    
    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  246–250
23. The substructure and luminescence of low-temperature AlGaAs/GaAs(100) heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  194–199
24. Features of mode locking in laser with quantum well in broad waveguide layer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:22 (2010),  29–36
25. Study of non-diffracting light beams from broad-stripe edge-emitting semiconductor lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:1 (2010),  22–30


26. Photoluminescence properties of heavily doped heterostructures based on (Al$_x$Ga$_{1-x}$As)$_{1-y}$Si$_y$ solid solutions
    
    Fizika Tverdogo Tela, 55:10 (2013),  2054–2057
27. X-ray diffraction studies of heterostructures based on solid solutions Al$_x$Ga$_{1-x}$As$_y$P$_{1-y}$ : Si
    
    Fizika Tverdogo Tela, 55:10 (2013),  2046–2049