Yafyasov Adil Malikovich

Publications in Math-Net.Ru

1. New mechanism of semiconductor polarization at the interface with an organic insulator
   
   Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  202–204
2. Resonance scattering across the superlattice barrier and the dimensional quantization
   
   Nanosystems: Physics, Chemistry, Mathematics, 7:5 (2016),  816–834
3. A distinguished mathematical physicist Boris S. Pavlov
   
   Nanosystems: Physics, Chemistry, Mathematics, 7:5 (2016),  782–788
4. Electrical properties of a SiC–Si multilayer structure
   
   Fizika i Tekhnika Poluprovodnikov, 48:6 (2014),  814–817
5. On the field effect in thin films of semiconductors with Kane’s charge-carrier dispersion relation
   
   Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  327–333
6. Field and explosive emissions from graphene-like structures
   
   Zhurnal Tekhnicheskoi Fiziki, 83:6 (2013),  71–77
7. Quantum self-consistent calculation of the differential capacitance of a semiconductor film
   
   Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1169–1174
8. Logical element NOT in a two-dimensional electron waveguide
   
   Zhurnal Tekhnicheskoi Fiziki, 81:9 (2011),  12–15
9. Landau–Zener effect for a quasi-2D periodic sandwich
   
   Nanosystems: Physics, Chemistry, Mathematics, 2:4 (2011),  32–50
10. Electrical properties of germanium-based insulator–semiconductor structures with an insulating layer of polynucleotides, and their monomer components on the surface
    
    Fizika i Tekhnika Poluprovodnikov, 45:12 (2011),  1617–1620
11. Resonance one-body scattering on a junction
    
    Nanosystems: Physics, Chemistry, Mathematics, 1:1 (2010),  108–147
12. Differential capacitance of a semiconductor film
    
    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1336–1340
13. Electrical and morphological properties of CdTe films synthesized by the method of molecular deposition
    
    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  590–593
14. Study of band-structure parameters for (CdHg)Te and HgTe gapless semiconductor near-surface layers by the method of field effect in electrolytes
    
    Fizika i Tekhnika Poluprovodnikov, 26:4 (1992),  636–643
15. Электрофизические свойства слоистой структуры на основе (CdHg)Te в системе полупроводник$-$электролит
    
    Fizika i Tekhnika Poluprovodnikov, 25:8 (1991),  1339–1343
16. Исследование скоростей заполнения квантовых подзон ОПЗ узкощелевых полупроводников (CdHg)Te
    
    Fizika i Tekhnika Poluprovodnikov, 25:4 (1991),  748–750
17. Исследование электрофизических параметров ОПЗ узкощелевых полупроводников Cd$_{x}$Hg$_{1-x}$Te методом эффекта поля в электролите
    
    Fizika i Tekhnika Poluprovodnikov, 25:1 (1991),  156–159
18. Электрофизические свойства поверхности непрерывных твердых растворов (MnHg)Te
    
    Fizika i Tekhnika Poluprovodnikov, 24:5 (1990),  875–878
19. Field Effect on a Gapless Semiconductor
    
    Fizika i Tekhnika Poluprovodnikov, 21:6 (1987),  1144–1147
20. Study of Electron-State Density in Allowed Bands on (CdHg)Te Surface
    
    Fizika i Tekhnika Poluprovodnikov, 21:4 (1987),  633–637
21. Determination of State Densities in Allowed Bands of Indium Antimonide and Lead Sulphide
    
    Fizika i Tekhnika Poluprovodnikov, 20:5 (1986),  954–957
22. Characteristics of Si$-$SiO$_2$ Interface and Surface Hole Mobility in the Inversion Layer
    
    Fizika i Tekhnika Poluprovodnikov, 18:3 (1984),  393–397
23. Вырождение и непараболичность зон в измерениях поверхностных эффектов на полупроводниках
    
    Fizika i Tekhnika Poluprovodnikov, 17:5 (1983),  818–823