Fetisova Natal'ya Vyacheslavovna

Publications in Math-Net.Ru

1. Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers
   
   Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  833–836
2. Pulsed semiconductor lasers with higher optical strength of cavity output mirrors
   
   Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  817–821
3. Temperature delocalization of charge carriers in semiconductor lasers
   
   Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  688–693
4. A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD
   
   Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  251–255
5. Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  246–250