Nikolaev D N

Publications in Math-Net.Ru

1. Буферные структуры GaAs/Si, полученные методом газофазной эпитаксии из металлоорганических соединений
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:7 (2026),  48–52
2. High-speed current switches based on AlGaAs/GaAs heterostructure thyristors with a thick $p$-base (8 $\mu$m)
   
   Fizika i Tekhnika Poluprovodnikov, 59:10 (2025),  629–634
3. A pulsed photoactivatable switch based on a semiconductor laser and an AlGaAs/GaAs high-voltage photodiode
   
   Fizika i Tekhnika Poluprovodnikov, 58:12 (2024),  703–708
4. Temperature dependence of the threshold current density in semiconductor lasers ($\lambda$ = 1050–1070 nm)
   
   Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1234–1238
5. Thermal delocalization of carriers in semiconductor lasers ($\lambda$ = 1010–1070 nm)
   
   Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1230–1233
6. Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate
   
   Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1417–1421
7. Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate
   
   Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1274–1278
8. InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate
   
   Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1640–1644
9. Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  246–250