Kuznetsov M V

Publications in Math-Net.Ru

1. Electroluminescence at a wavelength of 1.54 $\mu$m in Si:Er/Si structures consisting of a number of $p$–$n$ junctions
   
   Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1486–1488
2. Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 45:1 (2011),  132–135
3. Electroluminescence at a wavelength of 1.5 $\mu$m in Si:Er/Si diode structures doped with Al, Ga, and B acceptors
   
   Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1645–1648
4. Si:Er/Si diode structures for observing room-temperature electroluminescence at a wavelength of 1.54 $\mu$m
   
   Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  402–408