Kornaukhov Aleksandr Vasil'evich

Publications in Math-Net.Ru

1. Electroluminescence at a wavelength of 1.54 $\mu$m in Si:Er/Si structures consisting of a number of $p$–$n$ junctions
   
   Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1486–1488
2. Investigation of energy levels of Er-impurity centers in Si by the method of ballistic electron emission spectroscopy
   
   Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1153–1158
3. Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 45:1 (2011),  132–135
4. On the nature of electroluminescence at 1.5 $\mu$m in the breakdown mode of reverse-biased Er-doped silicon $p$–$n$-junction structures grown by sublimation molecular beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 45:1 (2011),  87–92
5. Electroluminescence at a wavelength of 1.5 $\mu$m in Si:Er/Si diode structures doped with Al, Ga, and B acceptors
   
   Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1645–1648