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Agarwal A K
Publications in Math-Net.Ru
Forward-current-generated donor centers in high-voltage 4
H
-SiC based
$p$
–
$i$
–
$n$
diodes
Pisma v Zhurnal Tekhnicheskoi Fiziki
,
37
:19 (2011),
45–50
Features of degradation in high-voltage 4H-SiC
$p$
–
$i$
–
$n$
diodes under the action of forward current pulses
Pisma v Zhurnal Tekhnicheskoi Fiziki
,
37
:8 (2011),
7–12
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Steklov Math. Inst. of RAS
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