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Shpakovski Sergey Vasil'evich

Publications in Math-Net.Ru

  1. Charge accumulation and relaxation in active mode of Al/Si$_3$N$_4$/$n$-Si and Al/Si$_3$N$_4$/SiO$_2$/$n$-Si device structures

    Zhurnal Tekhnicheskoi Fiziki, 95:11 (2025),  2221–2228
  2. Equivalent circuit of silicon diodes subjected to high-fluence electron irradiation

    Zhurnal Tekhnicheskoi Fiziki, 80:10 (2010),  74–82
  3. Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons

    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  397–401


© Steklov Math. Inst. of RAS, 2026