Kuznetsov V P

Publications in Math-Net.Ru

1. Mechanism of the subband excitation of photoluminescence from erbium ions in silicon under high-intensity optical pumping
   
   Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1435–1439
2. Determination of the excitation cross section of photoluminescence from an Er ion in the case of homogeneous and inhomogeneous optical excitation
   
   Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1398–1401
3. Electroluminescence at a wavelength of 1.54 $\mu$m in Si:Er/Si structures consisting of a number of $p$–$n$ junctions
   
   Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1486–1488
4. Investigation of energy levels of Er-impurity centers in Si by the method of ballistic electron emission spectroscopy
   
   Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1153–1158
5. Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 45:1 (2011),  132–135
6. Electroluminescence at a wavelength of 1.5 $\mu$m in Si:Er/Si diode structures doped with Al, Ga, and B acceptors
   
   Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1645–1648
7. Electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes $p^+/n^+/n$-Si:Er
   
   Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1533–1538
8. Specific features of the mechanisms of excitation of erbium photoluminescence in epitaxial Si:Er/Si structures
   
   Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1519–1522
9. Sublimation molecular beam epitaxy of silicon-based structures
   
   Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  413–417
10. Si:Er/Si diode structures for observing room-temperature electroluminescence at a wavelength of 1.54 $\mu$m
    
    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  402–408