Publications in Math-Net.Ru
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Features of conduction mechanisms in $n$-HfNiSn semiconductor heavily doped with a Rh acceptor impurity
Fizika i Tekhnika Poluprovodnikov, 47:9 (2013), 1157–1164
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Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor $n$-ZrNiSn
Fizika i Tekhnika Poluprovodnikov, 47:7 (2013), 882–889
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Features of the conduction mechanisms of the $n$-HfNiSn semiconductor heavily doped with the Co acceptor impurity
Fizika i Tekhnika Poluprovodnikov, 46:9 (2012), 1130–1137
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Features of conductivity of the intermetallic semiconductor $n$-ZrNiSn heavily doped with a Bi donor impurity
Fizika i Tekhnika Poluprovodnikov, 46:7 (2012), 910–917
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Features of a priori heavy doping of the $n$-TiNiSn intermetallic semiconductor
Fizika i Tekhnika Poluprovodnikov, 45:7 (2011), 879–885
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Features of an intermetallic $n$-ZrNiSn semiconductor heavily doped with atoms of rare-earth metals
Fizika i Tekhnika Poluprovodnikov, 44:3 (2010), 310–319
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