Bordovskii Vladimir Alekseevich

Publications in Math-Net.Ru

1. Ultralow-frequency photoelectric response of amorphous As$_2$Se$_3$ layers
   
   Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  944–947
2. Study of the structure of $a$-As$_2$Se$_3\langle$Bi$\rangle_x$ amorphous layers by dielectric spectroscopy
   
   Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  92–96
3. Specific features of the photodielectric effect in amorphous $\alpha$-As$_2$Se$_3$ layers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:2 (2013),  1–6
4. Effect of bismuth dopant on the dielectric properties of modified As$_2$Se$_3$
   
   Fizika Tverdogo Tela, 53:3 (2011),  430–432
5. Investigation of the structure of an amorphous As–Se semiconductor system by relaxation methods
   
   Fizika i Tekhnika Poluprovodnikov, 45:12 (2011),  1646–1651
6. Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide
   
   Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1038–1041
7. Temperature dependence of the dielectric parameters of thin arsenic triselenide layers with high bismuth content
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:20 (2010),  80–86
8. Dispersion of dielectric parameters in modified arsenic triselenide layers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:17 (2010),  9–15