Juciené V

Publications in Math-Net.Ru

1. Thermally stimulated 3–15 THz emission at plasmon-phonon frequencies in polar semiconductors
   
   Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1597–1601
2. Maximum drift velocity of electrons in selectively doped InAlAs/InGaAs/InAlAs heterostructures with InAs inserts
   
   Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  348–352
3. Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1214–1218
4. Drift velocity of electrons in quantum wells of selectively doped In$_{0.5}$Ga$_{0.5}$As/Al$_x$In$_{1-x}$As and In$_{0.2}$Ga$_{0.8}$As/Al$_x$Ga$_{1-x}$As heterostructures in high electric fields
   
   Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  778–782
5. Electron transport in an In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As quantum well with a $\delta$-Si doped barrier in high electric fields
   
   Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  928–933