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Publications in Math-Net.Ru
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Investigation of surface potential in the $V$-defect region of MBE Cd$_x$Hg$_{1-x}$Te film
Fizika i Tekhnika Poluprovodnikov, 49:3 (2015), 319–322
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Effect of thermal annealing and exposure to oxygen plasma on the properties of TiO$_2$–Si structures
Fizika i Tekhnika Poluprovodnikov, 48:7 (2014), 989–994
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Effect of the growth temperature on the statistical parameters of GaN surface morphology
Fizika i Tekhnika Poluprovodnikov, 48:7 (2014), 898–901
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Properties of TiO$_2$ films on silicon substrate
Fizika i Tekhnika Poluprovodnikov, 48:6 (2014), 759–762
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Effect of annealing in argon on the properties of thermally deposited gallium-oxide films
Fizika i Tekhnika Poluprovodnikov, 47:8 (2013), 1137–1143
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Gallium-oxide films obtained by thermal evaporation
Fizika i Tekhnika Poluprovodnikov, 47:5 (2013), 598–603
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The surface structure effect on the average height in atomic force microscopy investigations
Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:7 (2013), 66–72
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Effect of Pt, Pd, Au additives on the surface and in the bulk of tin dioxide thin films on the electrical and gas-sensitive properties
Fizika i Tekhnika Poluprovodnikov, 46:6 (2012), 820–828
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The effect of annealing on the properties of Ga$_2$O$_3$ anodic films
Fizika i Tekhnika Poluprovodnikov, 46:2 (2012), 278–284
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Ga$_2$O$_3$ films formed by electrochemical oxidation
Fizika i Tekhnika Poluprovodnikov, 45:8 (2011), 1130–1135
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The effect of the periphery of metal-semiconductor Schottky-barrier contacts on their electrical characteristics
Fizika i Tekhnika Poluprovodnikov, 45:1 (2011), 70–86
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Effect of oxygen plasma on the properties of tantalum oxide films
Fizika i Tekhnika Poluprovodnikov, 44:9 (2010), 1266–1273
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A study of the process of decomposition of supersaturated GaAs:Fe solid solution by scanning probe microscopy
Fizika i Tekhnika Poluprovodnikov, 44:8 (2010), 1009–1011
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Effect of gold on the properties of nitrogen dioxide sensors based on thin WO$_3$ films
Fizika i Tekhnika Poluprovodnikov, 44:3 (2010), 383–389
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Studying electric field profiles in GaAs-based detector structures by Kelvin probe force microscopy
Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:9 (2010), 95–101
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