|
|
Publications in Math-Net.Ru
-
Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic In$_{0.70}$Al$_{0.30}$As/In$_{0.76}$Ga$_{0.24}$As/In$_{0.70}$Al$_{0.30}$As structures on GaAs substrates
Fizika i Tekhnika Poluprovodnikov, 49:7 (2015), 942–950
-
Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In$_x$Ga$_{1-x}$As quantum well with InAs inserts
Fizika i Tekhnika Poluprovodnikov, 49:2 (2015), 204–213
-
Persistent photoconductivity and electron mobility in In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As/InP quantum-well structures
Fizika i Tekhnika Poluprovodnikov, 47:7 (2013), 927–934
-
Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts
Fizika i Tekhnika Poluprovodnikov, 46:4 (2012), 500–506
-
Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures
Fizika i Tekhnika Poluprovodnikov, 45:5 (2011), 666–671
© , 2026