Rozhavskaya Mariya Mikhailovna

Publications in Math-Net.Ru

1. Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN
   
   Fizika Tverdogo Tela, 57:9 (2015),  1850–1858
2. Synthesis of GaN nano- and microwire crystals induced by a titanium nanolayer
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:9 (2014),  17–23
3. Synthesis of an LED structure on the $(11\bar20)$ and $(0001)$ faces of mesa stripes grown by selective-area epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:1 (2014),  37–42
4. Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN
   
   Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  414–419
5. Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region
   
   Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1304–1308
6. Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:6 (2012),  90–95
7. Double-cross epitaxial overgrowth of nonpolar gallium nitride layers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:6 (2012),  22–28
8. Specific features of gallium nitride selective epitaxy in round windows
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:15 (2011),  95–102