Serebrennikova Ol'ga Yur'evna

Publications in Math-Net.Ru

1. Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1–2.0 mm
   
   Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1720–1726
2. Resistance of 4H-SiC Schottky barriers at high forward-current densities
   
   Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  951–955
3. Electrical properties of Pd-oxide-InP structures
   
   Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  376–378
4. Mode synchronization in a laser with coupled disk cavities
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:16 (2015),  77–83
5. High-power LEDs based on InGaAsP/InP heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1693–1696
6. Electroluminescence properties of a whispering-gallery-mode laser with coupled disk cavities
   
   Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1434–1438
7. High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 $\mu$m based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz
   
   Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1109–1115
8. Temperature dependence of the threshold current in quantum-well WGM lasers (2.0–2.5 $\mu$m)
   
   Fizika i Tekhnika Poluprovodnikov, 47:6 (2013),  821–824
9. Increasing output power of LEDs ($\lambda$ = 1.7–2.4 $\mu$m) by changing directions of reflected light fluxes in GaSb/GaInAsSb/GaAlAsSb heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:4 (2013),  39–45
10. Characterization of quantum-confinement whispering-gallery-mode lasers operating above room temperature
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:14 (2012),  27–31
11. Photodiodes based on InAs/InAsSb/InAsSbP heterostructures with quantum efficiency increased by changing directions of reflected light fluxes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:10 (2012),  43–49
12. Mid-infrared radiation sources based on coupled disk cavities
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:7 (2012),  7–13
13. Anisotropic polarization of radiation in quantum-confinement whispering-gallery-mode lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:3 (2012),  4–9
14. High-voltage (3.3 kV) 4H-SiC JBS diodes
    
    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  677–681
15. Room-temperature photodiodes based on InAs/InAs$_{0.88}$Sb$_{0.12}$/InAsSbP heterostructures for extended (1.5–4.8 $\mu$m) spectral range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:19 (2011),  95–103
16. Photodiodes based on InAs/InAs$_{0.88}$Sb$_{0.12}$/InAsSbP heterostructures for 2.5–4.9 $\mu$m spectral range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:1 (2011),  11–17
17. Excess leakage currents in high-voltage 4H-SiC Schottky diodes
    
    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  680–683
18. High-power InAs/InAsSbP heterostructure leds for methane spectroscopy ($\lambda\approx$ 3.3 $\mu$m)
    
    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  278–284
19. Fast-response $p$–$i$–$n$ photodiodes for 0.9–2.4 $\mu$m wavelength range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:9 (2010),  43–49
20. LEDs based on InAs/InAsSb heterostructures for CO$_2$ spectroscopy ($\lambda$ = 4.3 $\mu$m)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:1 (2010),  105–110