Bogdanova Elena Viktorovna

Publications in Math-Net.Ru

1. Radiation hardness of $n$-GaN Schottky diodes
   
   Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1386–1388
2. Effect of irradiation with MeV protons and electrons on the conductivity compensation and photoluminescence of moderately doped $p$-4H-SiC (CVD)
   
   Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1198–1201
3. Irradiation of 4H-SiC UV detectors with heavy ions
   
   Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  550–556
4. On the relationship between radiation-stimulated photoluminescence and nitrogen atoms in $p$-4H-SiC
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:23 (2015),  61–67
5. The long-range effect in 6H-SiC under irradiation with Xe ions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:5 (2015),  47–53
6. Conductivity compensation in $n$-4H-SiC (CVD) under irradiation with 0.9-MeV electrons
   
   Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1033–1036
7. Optical and electrical properties of 4H-SiC irradiated with Xe ions
   
   Fizika i Tekhnika Poluprovodnikov, 48:2 (2014),  167–174
8. Annealing of radiation-compensated silicon carbide
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:19 (2012),  90–94
9. Conductivity compensation in $p$-6H-SiC in irradiation with 8-MeV protons
   
   Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1188–1190
10. Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current
    
    Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  425–431
11. Use of sublimation epitaxy for obtaining volume 3C-SiC crystals
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:12 (2010),  71–77
12. Studying edge luminescence of $n$-3C-SiC epilayers grown on 6H-SiC substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:11 (2010),  32–37