Publications in Math-Net.Ru
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MOVPE of III–N LED structures with short technological process
Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:5 (2015), 9–17
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Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region
Fizika i Tekhnika Poluprovodnikov, 46:10 (2012), 1304–1308
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Double-cross epitaxial overgrowth of nonpolar gallium nitride layers
Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:6 (2012), 22–28
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Observation of localized centers with anomalous behavior in light-emitting heterostructures with multiple InGaN/GaN quantum wells
Fizika i Tekhnika Poluprovodnikov, 44:3 (2010), 352–357
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Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes
Fizika i Tekhnika Poluprovodnikov, 44:1 (2010), 126–129
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