Amelchuk Dmitrii Gennad'evich

Publications in Math-Net.Ru

1. Application of 6H-SiC/3C-SiC(001) composite substrates for growth of cubic silicon carbide by sublimation method
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  294–297
2. the features of the crystallization of an intermediate silicon layer during the transfer of a thin 3C-SiC(001) layer onto a 6H-SiC(0001) substrate
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:4 (2025),  11–14
3. Interaction of silicon carbide with silicon melt formed under conditions of direct bonding of epitaxial structures of 3C-SiC/Si and 6H-SiC wafers
   
   Fizika i Tekhnika Poluprovodnikov, 58:9 (2024),  501–504
4. Templates for homoepitaxial growth of 3C-SiC obtained by direct bonding of silicon carbide wafers of differing polytype
   
   Fizika i Tekhnika Poluprovodnikov, 56:11 (2022),  1094–1098