Publications in Math-Net.Ru
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Si$_3$N$_4$ layers for the in-situ passivation of GaN-based HEMT structures
Fizika i Tekhnika Poluprovodnikov, 49:11 (2015), 1469–1472
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Characteristics of fullerene-based diode structures on polymer and glass substrates
Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 138–141
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Application of low-barrier metal–semiconductor–metal structures for the detection of microwave signals
Zhurnal Tekhnicheskoi Fiziki, 84:7 (2014), 91–95
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Use of related parameters in X-ray diffraction analysis of multilayer structures with allowance for the layer growth time
Zhurnal Tekhnicheskoi Fiziki, 84:3 (2014), 94–98
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Study of multilayered SiGe semiconductor structures by X-ray diffractometry, grazing-incidence X-ray reflectometry, and secondary-ion mass spectrometry
Fizika i Tekhnika Poluprovodnikov, 47:12 (2013), 1580–1585
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