Fadeeva Nadezda Nikolaevna

Publications in Math-Net.Ru

1. Megadevices of silicon microelectronics
   
   Fizika Tverdogo Tela, 67:1 (2025),  3–13
2. Charge collection in silicon $p^+$–$n$–$n^+$-structures at temperature 40 mK
   
   Fizika i Tekhnika Poluprovodnikov, 59:3 (2025),  179–186
3. Drift transport of charge carriers in silicon $p^+$–$n$–$n^+$ structures at temperatures $\le$ 100 mK
   
   Fizika i Tekhnika Poluprovodnikov, 58:8 (2024),  415–423
4. Physical justification for the time resolution limit of silicon planar detectors of long-range heavy ions
   
   Fizika i Tekhnika Poluprovodnikov, 58:6 (2024),  333–340
5. Analysis of $I$–$V$ characteristics of Si diodes irradiated with short-range ions
   
   Fizika i Tekhnika Poluprovodnikov, 56:11 (2022),  1093
6. Influence of irradiation with neutrons on the characteristics of the voltage terminating structure in silicon radiation detectors
   
   Fizika i Tekhnika Poluprovodnikov, 46:7 (2012),  971–978
7. Potential distribution in voltage terminating structures with floating $p$–$n$ junction rings of silicon radiation detectors
   
   Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  547–553