Pashkovskii Andrei Borisovich

Publications in Math-Net.Ru

1. The bottom of a dimensional subband in a superlattice with strongly coupled shallow quantum wells
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:21 (2025),  22–25
2. Estimation of an electron momentum parallel to the boundary of the heterojunction effect on the height of the bottom of the first subband in transistor superlattices with thin high barriers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:17 (2025),  22–24
3. Heterostructure with additional digital potential barriers for lownoise fieldeffect transistors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:14 (2024),  48–50
4. Electrons drift velocity overshot in heterostructures with double-sided donor-acceptor doping and digital barriers
   
   Fizika i Tekhnika Poluprovodnikov, 57:1 (2023),  21–28
5. Double-channel heterostructure with additional digital potential barriers for high-power field-effect transistors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:14 (2023),  28–30
6. GaN field-effect transistor with efficient heat dissipation on Si substrate
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:2 (2023),  10–13
7. AlGaAs/InGaAs/GaAs heterostructures for pHEMT switching transistors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:17 (2022),  20–23
8. The electrons drift velocity overshot in inverted transistor heterostructures with donor-acceptor doping and additional digital potential barriers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:12 (2022),  11–14
9. Nonlocal electron dynamics in GaN/AlGaN transistor heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:2 (2022),  44–46
10. A millimeter-wave field-effect transistor based on a pseudomorphic heterostructure with an additional potential barrier
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021),  52–54
11. Thermal surface interface for high-power arsenide–gallium heterostructure fets
    
    Zhurnal Tekhnicheskoi Fiziki, 89:2 (2019),  252–257
12. Localization of upper-valley electrons in a narrow-bandgap channel: a possible additional mechanism of current increase in DA-DpHEMT
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  11–14
13. Features of the upsurge in drift velocity of electrons in DA-pHEMT
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:17 (2018),  103–110
14. Specific features of ballistic electron transport in double-level open systems in a large-amplitude high-frequency electric field
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  623–631
15. Dynamics of electron scattering in absolutely transparent channels in three-barrier structures in the case of two-photon transitions
    
    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  453–460
16. A two-dimensional electron gas in donor–acceptor doped backward heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:12 (2017),  42–51
17. High-efficiency two-frequency laser generation in three-barrier nanostructures with ballistic electron transport
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:18 (2016),  88–94
18. Studying average electron drift velocity in pHEMT structures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:16 (2016),  41–47
19. Adjusting the position of the optimum operating point of a power heterostructure field-effect transistor by forming a gate potential barrier based on a donor-acceptor structure
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:3 (2015),  81–87
20. Prospects for the development of high-power field-effect transistors based on heterostructures with donor-acceptor doping
    
    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  684–692
21. Decreasing the role of transverse spatial electron transport and increasing the output power of heterostructure field-effect transistors
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:17 (2012),  84–89
22. Splitting of the resonance levels of double-barrier structures in a high microwave electric field
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 93:10 (2011),  620–624
23. Resonance propagation of electrons through three-barrier structures in a two-frequency electric field
    
    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  759–764
24. Dual-wavelength lasing in three-barrier heterostructures with coherent electron transport
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:23 (2010),  17–23
25. High transparency of a two-photon scattering channel in triple-barrier structures
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 89:1 (2009),  32–37
26. Parity and abrupt broadening of resonance levels in triple-barrier structures
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 82:4 (2005),  228–233
27. High intensity of interband transitions in double-barrier structures with a high-frequency electric field
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 75:2 (2002),  92–95
28. Effects of virtual transitions in a high-frequency field on electron transport in triple-barrier structures
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 73:11 (2001),  698–701
29. Application restrictions for two-level models of the resonance interaction of electrons with an alternating electric field in two-barrier structures
    
    TMF, 120:2 (1999),  332–341
30. Field and collisional ionization of deep energy levels in field-effect transistors on heterostructures with selective doping
    
    Fizika i Tekhnika Poluprovodnikov, 26:9 (1992),  1574–1579