Petrov Vasily N

Publications in Math-Net.Ru

1. Composite films based on carbon quantum dots in a matrix of PEDOT:PSS conductive polymer
   
   Fizika Tverdogo Tela, 63:8 (2021),  1183–1188
2. Photoluminescence and photoconductivity of lead halide perovskite films modified with mixed cellulose esters
   
   Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021),  987
3. Conductivity of composite films based on conductive polymer PEDOT:PSS, graphene oxide and nanoparticles TiO$_{2}$ for contact layers of perovskite photovoltaic structures
   
   Fizika Tverdogo Tela, 61:4 (2019),  773–778
4. Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system
   
   Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  804–811
5. Field-effect transistors with high mobility and small hysteresis of transfer characteristics based on CH$_{3}$NH$_{3}$PbBr$_{3}$ films
   
   Fizika Tverdogo Tela, 59:12 (2017),  2457–2461
6. On the morphology of the interlayer surface and micro-Raman spectra of layered films in topological insulators based on bismuth telluride
   
   Fizika i Tekhnika Poluprovodnikov, 51:6 (2017),  763–765
7. Field-effect transistor structures on the basis of poly(3-hexylthiophene), fullerene derivatives [60]PCBM, [70]PCBM, and nickel nanoparticles
   
   Fizika Tverdogo Tela, 58:9 (2016),  1818–1825
8. Surface morphology and Raman spectroscopy of thin layers of antimony and bismuth chalcogenides
   
   Fizika Tverdogo Tela, 58:7 (2016),  1390–1397
9. Fabrication of graphene and graphite films on the Ni(111) surface
   
   Zhurnal Tekhnicheskoi Fiziki, 86:11 (2016),  121–124
10. On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1195–1201
11. Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016),  39–46
12. The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:13 (2016),  80–86