Publications in Math-Net.Ru
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Formation of the low-resistivity compound Cu$_{3}$Ge by low-temperature treatment in an atomic hydrogen flux
Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1258–1262
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Heterojunction low-barrier GàAs diodes with an improved reverse I–V characteristic
Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1123–1127
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Formation of Ta/Ti/Al/Mo/Au ohmic contacts to an AlGaN/AlN/GaN heterostructure grown on a silicon substrate
Fizika i Tekhnika Poluprovodnikov, 48:3 (2014), 402–406
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Influence of annealing on the metal/semiconductor contacts deposited on sulfur-treated $n$-GaAs surface
Fizika i Tekhnika Poluprovodnikov, 45:9 (2011), 1191–1196
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Study of the influence of the sulfide and ultraviolet treatment of the $n$–$i$-GaAs surface on the parameters of ohmic contacts
Fizika i Tekhnika Poluprovodnikov, 45:8 (2011), 1056–1061
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Numerical simulation of hydrogenation of GaAs at the cooling stage
Fizika i Tekhnika Poluprovodnikov, 44:4 (2010), 433–439
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