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Publications in Math-Net.Ru
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Effect of thallium doping on the mobility of electrons in Bi$_{2}$Se$_{3}$ and holes in Sb$_{2}$Te$_{3}$
Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 886–892
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Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic In$_{0.70}$Al$_{0.30}$As/In$_{0.76}$Ga$_{0.24}$As/In$_{0.70}$Al$_{0.30}$As structures on GaAs substrates
Fizika i Tekhnika Poluprovodnikov, 49:7 (2015), 942–950
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Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In$_x$Ga$_{1-x}$As quantum well with InAs inserts
Fizika i Tekhnika Poluprovodnikov, 49:2 (2015), 204–213
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Persistent photoconductivity and electron mobility in In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As/InP quantum-well structures
Fizika i Tekhnika Poluprovodnikov, 47:7 (2013), 927–934
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Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density
Fizika i Tekhnika Poluprovodnikov, 45:10 (2011), 1373–1378
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