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Publications in Math-Net.Ru
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Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy
Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1538–1542
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Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”
Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1151
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Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron
Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1595–1598
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On the radiation resistance of planar Gunn diodes with $\delta$-doped layers
Fizika i Tekhnika Poluprovodnikov, 49:11 (2015), 1507–1515
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Effect of rapid thermal annealing on the parameters of gallium-arsenide low-barrier diodes with near-surface $\delta$-doping
Fizika i Tekhnika Poluprovodnikov, 47:11 (2013), 1481–1485
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Barrier-height modification in Schottky silicon diodes with highly doped 3D and 2D layers
Fizika i Tekhnika Poluprovodnikov, 46:11 (2012), 1384–1387
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Method of selective doping of silicon by segregating impurities
Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:17 (2011), 75–81
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