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Shakhov L V

Publications in Math-Net.Ru

  1. Study of heavily doped $n$-$3\mathrm{C}$-$\mathrm{SiC}$, epitaxial films grown on $6H$-$\mathrm{SiC}$ semi-insulating substraes by sublimation method

    Fizika i Tekhnika Poluprovodnikov, 56:2 (2022),  225–228
  2. Effects of irradiation with 8-MeV protons on $n$-3$C$-SiC heteroepitaxial layers

    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1088–1090
  3. Fabrication of quasi-superlattices at the interface between 3C-SiC epitaxial layer and substrates of hexagonal SiC polytypes by sublimation epitaxy in vacuum

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:23 (2015),  89–94


© Steklov Math. Inst. of RAS, 2026