Tsyranov Sergey Nikolaevich

Publications in Math-Net.Ru

1. Spatial inhomogeneity of impact-ionization switching of power silicon thyristors
   
   Zhurnal Tekhnicheskoi Fiziki, 94:5 (2024),  771–782
2. Spatial inhomogeneity of impact-ionization switching process in power $\mathrm{Si}$ diode
   
   Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  594–602
3. Study of the voltage drop process for the case of high-power thyristors switched in the impact-ionization mode
   
   Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  680–688
4. High-power thyristor switching via an overvoltage pulse with nanosecond rise time
   
   Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  398–407
5. On the picosecond switching of a high-density current (60 kA/cm$^2$) via a Si closing switch based on a superfast ionization front
   
   Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1095–1106
6. Generation of powerful microwave voltage oscillations in a diffused silicon diode
   
   Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  658–666
7. Operation of a semiconductor opening switch at ultrahigh current densities
   
   Fizika i Tekhnika Poluprovodnikov, 46:4 (2012),  535–543
8. Ultrahigh-power picosecond current switching by a silicon sharpener based on successive breakdown of structures
   
   Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  962–969