|
|
Publications in Math-Net.Ru
-
Spatial inhomogeneity of impact-ionization switching of power silicon
thyristors
Zhurnal Tekhnicheskoi Fiziki, 94:5 (2024), 771–782
-
Spatial inhomogeneity of impact-ionization switching process in power $\mathrm{Si}$ diode
Fizika i Tekhnika Poluprovodnikov, 57:7 (2023), 594–602
-
Study of the voltage drop process for the case of high-power thyristors switched in the impact-ionization mode
Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 680–688
-
High-power thyristor switching via an overvoltage pulse with nanosecond rise time
Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 398–407
-
On the picosecond switching of a high-density current (60 kA/cm$^2$) via a Si closing switch based on a superfast ionization front
Fizika i Tekhnika Poluprovodnikov, 48:8 (2014), 1095–1106
-
Generation of powerful microwave voltage oscillations in a diffused silicon diode
Fizika i Tekhnika Poluprovodnikov, 47:5 (2013), 658–666
-
A two-channel relativistic backward-wave generator with 8-mm range, controllable phase difference, and channel power of 230 MW
Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:20 (2013), 49–56
-
Operation of a semiconductor opening switch at ultrahigh current densities
Fizika i Tekhnika Poluprovodnikov, 46:4 (2012), 535–543
-
Ultrahigh-power picosecond current switching by a silicon sharpener based on successive breakdown of structures
Fizika i Tekhnika Poluprovodnikov, 44:7 (2010), 962–969
© , 2026