Publications in Math-Net.Ru
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The effect of surface traps on the static characteristics and the saturation current spread in the channel of GaN HEMTs
Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:22 (2023), 43–46
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AlN/GaN heterostructures for normally-off transistors
Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 395–402
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Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 245–249
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Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures
Fizika i Tekhnika Poluprovodnikov, 45:10 (2011), 1405–1409
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Matrices of 960-nm vertical-cavity surface-emitting lasers
Fizika i Tekhnika Poluprovodnikov, 45:6 (2011), 836–839
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