Palmour John Williams

Publications in Math-Net.Ru

1. Transient switch-off of a 4$H$-SiC bipolar transistor from the deep-saturation mode
   
   Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1243–1248
2. Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers
   
   Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1125–1130
3. Analysis of the impact of non-1D effects on the gate switch-on current in 4$H$-SiC thyristors
   
   Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  234–239
4. Isothermal current–voltage characteristics of high-voltage 4$H$-SiC junction barrier Schottky rectifiers
   
   Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  668–673
5. High-voltage silicon-carbide thyristor with an $n$-type blocking base
   
   Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  408–414
6. Violation of neutrality and occurrence of $S$-shaped current-voltage characteristic for doped semiconductors under double injection
   
   Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  302–309
7. Specific features of the steady-state carrier distribution and holding current in an optically triggered SiC thyristor
   
   Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  118–123
8. Overheating of an optically triggered SiC thyristor during switch-on and turn-on spread
   
   Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1224–1229
9. Forward-current-generated donor centers in high-voltage 4H-SiC based $p$–$i$–$n$ diodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:19 (2011),  45–50
10. Features of degradation in high-voltage 4H-SiC $p$–$i$–$n$ diodes under the action of forward current pulses
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:8 (2011),  7–12