Parnes Yakov Mikailovich

Publications in Math-Net.Ru

1. AlN/GaN heterostructures for normally-off transistors
   
   Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  395–402
2. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
   
   Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  245–249
3. Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016),  39–46
4. Microwave power amplifiers based on AlGaN/GaN transistors with a two-dimensional electron gas
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016),  1–8
5. Normally off transistors based on in situ passivated AlN/GaN heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:14 (2016),  72–79
6. The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:13 (2016),  80–86