Publications in Math-Net.Ru
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Nature of defects responsible for the red shift of the fundamental absorption edge and the increase in the refractive index of irradiated Si$_3$N$_4$
Fizika Tverdogo Tela, 67:11 (2025), 2117–2122
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Mechanism of charge transport
in ITO/[GeO$_x$]$_{(z)}$[SiO$_2$]$_{(1-z)}$ (0.25 $\le z\le1$)/$n^+$-Si MIS structures
Fizika i Tekhnika Poluprovodnikov, 59:6 (2025), 363–369
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Octafluorobiphenyl-4,4'-diyl 9-oxothioxanthene-1,4-diyl polyether – a promising material for organic film based memristors: synthesis, memristive effect and charge transport mechanism
Mendeleev Commun., 34:5 (2024), 667–669
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Electrophysical properties of Si/SiO$_{2}$ nanostructures fabricated by direct bonding
Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:11 (2016), 73–81
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