|
|
Publications in Math-Net.Ru
-
Galvanomagnetic properties of GaMnAs layers obtained by ion implantation: the role of Mn$^+$ ion energy
Fizika Tverdogo Tela, 66:6 (2024), 871–876
-
Optoelectronic properties of highly doped Ge:Sb layers prepared by ion-beam methods
Optics and Spectroscopy, 132:11 (2024), 1189–1195
-
Pulsed laser annealing of silicon implanted with manganese ions
Optics and Spectroscopy, 132:1 (2024), 42–46
-
Luminescence and thermal stability of $F$-type defects in sapphire irradiated with pulsed ion beams
Optics and Spectroscopy, 128:2 (2020), 211–217
-
Photoelectric properties of composite Si layers with Ag nanoparticles obtained by ion implantation and laser annealing
Optics and Spectroscopy, 126:2 (2019), 214–219
-
The effect of pulsed laser radiation on a Si layer with a high dose of implanted Ag$^{+}$ ions
Optics and Spectroscopy, 124:4 (2018), 549–555
-
Fabrication of composite based on GeSi with Ag nanoparticles using ion implantation
Zhurnal Tekhnicheskoi Fiziki, 86:12 (2016), 104–110
-
Optical diagnostics of the laser-induced phase transformations in thin germanium films on silicon, sapphire, and fused silica
Zhurnal Tekhnicheskoi Fiziki, 85:3 (2015), 89–95
-
Pulsed modification of germanium films on silicon, sapphire, and quartz substrates: Structure and optical properties
Fizika i Tekhnika Poluprovodnikov, 49:6 (2015), 746–752
-
Pulsed nanosecond annealing of magnesium-implanted silicon
Zhurnal Tekhnicheskoi Fiziki, 83:1 (2013), 99–104
-
Influence of Cr$^+$ ion implantation and pulsed ion-beam annealing on the formation and optical properties of Si/CrSi$_2$/Si(111) heterostructures
Zhurnal Tekhnicheskoi Fiziki, 80:7 (2010), 122–130
© , 2026