Publications in Math-Net.Ru
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Effect of arsenic pressure during overgrowth of InAs quantum dots with a thin low-temperature GaAs layer on their optical properties
Fizika i Tekhnika Poluprovodnikov, 57:4 (2023), 276–281
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Study of the effect of ultra-low arsenic flux on the formation of In(As)/GaAs nanostructures by droplet epitaxy
Fizika Tverdogo Tela, 64:8 (2022), 943–947
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Study of GaAs epitaxial growth on Si substrates modified by focused ion beams
Fizika Tverdogo Tela, 64:6 (2022), 605–611
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Investigation of the influence of the ion-beam treatment dose of the Si(111) surface on the GaAs nanowires growth processes
Fizika i Tekhnika Poluprovodnikov, 56:8 (2022), 759–764
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Effect of interaction in the Ga–As–O system on the morphology of a GaAs surface during molecular-beam epitaxy
Fizika Tverdogo Tela, 58:5 (2016), 1011–1018
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Monte Carlo investigation of the influence of V/III flux ratio on GaAs/GaAs(001) submonolayer epitaxy
Zhurnal Tekhnicheskoi Fiziki, 86:7 (2016), 15–21
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