Kondratov Matvey

Publications in Math-Net.Ru

1. Буферные структуры GaAs/Si, полученные методом газофазной эпитаксии из металлоорганических соединений
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:7 (2026),  48–52
2. High-speed current switches based on AlGaAs/GaAs heterostructure thyristors with a thick $p$-base (8 $\mu$m)
   
   Fizika i Tekhnika Poluprovodnikov, 59:10 (2025),  629–634
3. Sources of high-power laser pulses at a wavelength of 1550 nm based on thyristor switch-laser designs
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:16 (2025),  21–25
4. Compact high-power nanosecond-duration laser pulse sources (940 nm) based on “semiconductor laser – thyristor switch” vertical stacks
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:11 (2025),  7–10
5. Thyristor switches based on hetero and homostructures (Al)GaAs/GaAs for generating high-frequency nanosecond current pulses
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:4 (2024),  43–46
6. Lateral mode selection of single-mode laser diode microstripe bar (1050 nm) in external cavity
   
   Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  693–699
7. High-current low-voltage switches for nanosecond pulse durations based on thyristor (Al)GaAs/GaAs homo- and heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  678–683
8. Luminescence in $p$–$i$–$n$ structures with compensated quantum wells
   
   Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  663–673
9. Laser diodes (850nm) based on an asymmetric AlGaAs/GaAs heterostructure with a bulk active region for generating high-power subnanosecond optical pulses
   
   Kvantovaya Elektronika, 53:1 (2023),  1–5