Shushkanov Ilya Vasil'evich

Publications in Math-Net.Ru

1. High-speed current switches based on AlGaAs/GaAs heterostructure thyristors with a thick $p$-base (8 $\mu$m)
   
   Fizika i Tekhnika Poluprovodnikov, 59:10 (2025),  629–634
2. Design optimization of InGaAsP/InP heterostructures of high-power laser diodes emitting at a wavelength of 1.55 $\mu$m
   
   Fizika i Tekhnika Poluprovodnikov, 59:3 (2025),  171–178
3. Sources of high-power laser pulses of sub-nanosecond duration based on thyristor switch-laser diode structures for the 1500nm spectral range
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:17 (2025),  49–52
4. Sources of high-power laser pulses at a wavelength of 1550 nm based on thyristor switch-laser designs
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:16 (2025),  21–25
5. Compact high-power nanosecond-duration laser pulse sources (940 nm) based on “semiconductor laser – thyristor switch” vertical stacks
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:11 (2025),  7–10
6. Analysis of saturation mechanisms of high-power pulsed semiconductor lasers based on the InGaAsP/InP heterostructure emitting at a wavelength of 1.55 μm
   
   Kvantovaya Elektronika, 55:3 (2025),  141–145
7. A pulsed photoactivatable switch based on a semiconductor laser and an AlGaAs/GaAs high-voltage photodiode
   
   Fizika i Tekhnika Poluprovodnikov, 58:12 (2024),  703–708
8. Hybrid stacks of thyristor switch – semiconductor laser based on AlInGaAsP/InP heterostructures for high-power pulsed laser sources (1400–1500 nm)
   
   Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  165–170
9. Low-voltage current switches based on AlInGaAsP/InP thyristor heterostructures for nanosecond pulsed laser emitters (1.5 $\mu$m)
   
   Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  161–164
10. The effect of the cavity length on the output optical power of semiconductor laser-thyristors based on AlGaAs/GaAs/InGaAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 58:2 (2024),  96–105
11. Dynamics of laser generation in single-mode microstripe semiconductor laser bar (1065 nm) operating in gain-swithching mode
    
    Fizika i Tekhnika Poluprovodnikov, 58:1 (2024),  42–48
12. Thyristor switches based on hetero and homostructures (Al)GaAs/GaAs for generating high-frequency nanosecond current pulses
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:4 (2024),  43–46
13. Temperature dependence of the output optical power of semiconductor lasers–thyristors based on AlGaAs/GaAs/InGaAs heterostructures
    
    Kvantovaya Elektronika, 54:4 (2024),  218–223
14. Lateral mode selection of single-mode laser diode microstripe bar (1050 nm) in external cavity
    
    Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  693–699
15. High-current low-voltage switches for nanosecond pulse durations based on thyristor (Al)GaAs/GaAs homo- and heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  678–683
16. Low-voltage InP heterostyristors for 50–150 ns current pulses generation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:16 (2023),  29–32
17. Laser diodes (850nm) based on an asymmetric AlGaAs/GaAs heterostructure with a bulk active region for generating high-power subnanosecond optical pulses
    
    Kvantovaya Elektronika, 53:1 (2023),  1–5