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Publications in Math-Net.Ru
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Epitaxial growth of thin Ca$_{1-x}$Ba$_x$F$_2$ films on Si(111) and study of electro-physical characteristics of Ca$_{1-x}$Ba$_x$F$_2$ – based metal–insulator–semiconductor structures
Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:22 (2025), 26–30
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The influence of external parameters on the switching process by delayed ionization in a silicon $p^+$–$n$–$n^+$-structure
Fizika i Tekhnika Poluprovodnikov, 58:6 (2024), 326–332
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Reproducibility of the electrophysical characteristics of the prototype transistor structures based on the graphene–CaF$_2$–Si(111) heterosystem
Fizika i Tekhnika Poluprovodnikov, 58:5 (2024), 272–277
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High-power subnanosecond silicon avalanche shaper
Zhurnal Tekhnicheskoi Fiziki, 87:5 (2017), 793–796
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The formation of shallow-donor distribution profiles in proton irradiation of silicon
Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:23 (2014), 67–73
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Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding
Fizika i Tekhnika Poluprovodnikov, 44:8 (2010), 1135–1139
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Growth and properties of single crystals of Si$_{1-x}$Ge$_x$(0 $<x<$ 0.35) solid solutions
Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:3 (2010), 45–52
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