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Feklistov Konstantin Viktorovich
Publications in Math-Net.Ru
Redistribution of erbium and oxygen recoil atoms and the structure of silicon thin surface layers formed by high-dose argon implantation through Er and SiO
$_{2}$
surface films
Fizika i Tekhnika Poluprovodnikov
,
52
:13 (2018),
1589–1596
Doping silicon with erbium by recoil implantation
Pisma v Zhurnal Tekhnicheskoi Fiziki
,
41
:16 (2015),
52–60
Precipitation of boron in silicon on high-dose implantation
Fizika i Tekhnika Poluprovodnikov
,
44
:3 (2010),
302–305
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Steklov Math. Inst. of RAS
, 2026