Rizaev Artem

Publications in Math-Net.Ru

1. High-speed current switches based on AlGaAs/GaAs heterostructure thyristors with a thick $p$-base (8 $\mu$m)
   
   Fizika i Tekhnika Poluprovodnikov, 59:10 (2025),  629–634
2. Design optimization of InGaAsP/InP heterostructures of high-power laser diodes emitting at a wavelength of 1.55 $\mu$m
   
   Fizika i Tekhnika Poluprovodnikov, 59:3 (2025),  171–178
3. Compact high-power nanosecond-duration laser pulse sources (940 nm) based on “semiconductor laser – thyristor switch” vertical stacks
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:11 (2025),  7–10
4. Analysis of saturation mechanisms of high-power pulsed semiconductor lasers based on the InGaAsP/InP heterostructure emitting at a wavelength of 1.55 μm
   
   Kvantovaya Elektronika, 55:3 (2025),  141–145
5. A pulsed photoactivatable switch based on a semiconductor laser and an AlGaAs/GaAs high-voltage photodiode
   
   Fizika i Tekhnika Poluprovodnikov, 58:12 (2024),  703–708
6. Dynamics of laser generation in single-mode microstripe semiconductor laser bar (1065 nm) operating in gain-swithching mode
   
   Fizika i Tekhnika Poluprovodnikov, 58:1 (2024),  42–48
7. Thyristor switches based on hetero and homostructures (Al)GaAs/GaAs for generating high-frequency nanosecond current pulses
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:4 (2024),  43–46
8. Lateral mode selection of single-mode laser diode microstripe bar (1050 nm) in external cavity
   
   Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  693–699
9. High-current low-voltage switches for nanosecond pulse durations based on thyristor (Al)GaAs/GaAs homo- and heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  678–683
10. Laser diodes (850nm) based on an asymmetric AlGaAs/GaAs heterostructure with a bulk active region for generating high-power subnanosecond optical pulses
    
    Kvantovaya Elektronika, 53:1 (2023),  1–5
11. Lateral waveguide mode selection for the development of single-mode ridge lasers with a distributed Bragg mirror
    
    Kvantovaya Elektronika, 52:10 (2022),  889–894