Publications in Math-Net.Ru
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Influence of emitter region doping level on the turn-on dynamics of low-voltage GaAs dynistors
Fizika i Tekhnika Poluprovodnikov, 59:1 (2025), 48–52
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Influence of strip mesastructure topology on a low-voltage GaAs thyristor main parameters
Fizika i Tekhnika Poluprovodnikov, 58:3 (2024), 156–160
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MOCVD growth of InGaAs metamorphic heterostructures for photodiodes with low dark current
Fizika i Tekhnika Poluprovodnikov, 57:6 (2023), 495–500
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Influence of chemical treatment and surface topology on the blocking voltage of GaAs thyristor mesastructures, grown by MOCVD
Fizika i Tekhnika Poluprovodnikov, 56:1 (2022), 134–138
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Photodetectors with an InGaP active region and InGaP metamorphic buffer layer grown on GaAs substrates
Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1460–1463
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