Fedorov Vladimir Viktorovich

Publications in Math-Net.Ru

1. Study of the influence of current spreading on the operating characteristics of GaP/GaPNAs/GaP micro-leds on Si
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:3 (2026),  11–15
2. Investigation of the doping level of semiconductor nanowires via Raman spectroscopy
   
   Fizika Tverdogo Tela, 67:3 (2025),  460–463
3. Effect of buffer layer on the characteristics of GaPN layers grown by molecular beam epitaxy on silicon substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:10 (2025),  7–10
4. BaM hexaferrite (BaFe$_{12}$O$_{19}$) thin films on Al$_2$O$_3$ (01–12) substrates: crystal structure and magnetic properties
   
   Optics and Spectroscopy, 132:11 (2024),  1123–1126
5. Numerical modeling of second harmonic generation in Si nanoparticles
   
   Fizika i Tekhnika Poluprovodnikov, 58:9 (2024),  464–466
6. Formation of InAs$_{1-x}$N$_x$ islands and InAs stem-assisted InAs$_{1-x}$N$_x$ nanowires by means of epitaxial growth on silicon
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:17 (2024),  7–10
7. Flexible solar cells based on GaAs/AlGaAs heterostructure with improved weight and dimension characteristics
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:18 (2022),  6–9
8. Growth mechanism of monolayer on the top facet of Ga-catalyzed GaAs and GaP nanowires
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:4 (2022),  20–23
9. Core-shell III-nitride nanowire heterostructure: negative differential resistance and device application potential
   
   Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  475
10. A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures
    
    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  675–683
11. Analysis of the electroluminescence features of silicon metal-insulator-semiconductor structures as a tool for diagnostics of the injection properties of a dielectric layer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:19 (2013),  76–85
12. Characteristics of thin calcium fluoride barrier layers for field-effect transistors and functional electronic devices
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:9 (2010),  26–33