Rogl Peter F

Publications in Math-Net.Ru

1. Mechanism of the generation of donor–acceptor pairs in heavily doped $n$-ZrNiSn with the Ga acceptor impurity
   
   Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  311–321
2. Features of the band structure and conduction mechanisms of $n$-HfNiSn heavily doped with Y
   
   Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  147–153
3. Features of conductivity mechanisms in heavily doped compensated V$_{1-x}$Ti$_{x}$FeSb semiconductor
   
   Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  877–885
4. Structural defect generation and band-structure features in the HfNi$_{1-x}$Co$_x$Sn semiconductor
   
   Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1009–1015
5. Features of the band structure and conduction mechanisms of $n$-HfNiSn semiconductor heavily Lu-doped
   
   Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  299–306
6. Features of the band structure and conduction mechanisms in the $n$-HfNiSn semiconductor heavily doped with Ru
   
   Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1585–1591
7. Features of conduction mechanisms in $n$-HfNiSn semiconductor heavily doped with a Rh acceptor impurity
   
   Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1157–1164
8. Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor $n$-ZrNiSn
   
   Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  882–889
9. Features of the conduction mechanisms of the $n$-HfNiSn semiconductor heavily doped with the Co acceptor impurity
   
   Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1130–1137
10. Features of conductivity of the intermetallic semiconductor $n$-ZrNiSn heavily doped with a Bi donor impurity
    
    Fizika i Tekhnika Poluprovodnikov, 46:7 (2012),  910–917
11. Features of a priori heavy doping of the $n$-TiNiSn intermetallic semiconductor
    
    Fizika i Tekhnika Poluprovodnikov, 45:7 (2011),  879–885