Grasser Tibor

Publications in Math-Net.Ru

1. Reproducibility of the electrophysical characteristics of the prototype transistor structures based on the graphene–CaF$_2$–Si(111) heterosystem
   
   Fizika i Tekhnika Poluprovodnikov, 58:5 (2024),  272–277
2. Field-effect transistor with graphene channel and epitaxial calcium fluoride layer as a gate dielectric
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:4 (2024),  27–30
3. Impact of the device geometric parameters on hot-carrier degradation in FinFETs
   
   Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1631–1635
4. Analysis of the features of hot-carrier degradation in FinFETs
   
   Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1177–1182
5. Physical principles of self-consistent simulation of the generation of interface states and the transport of hot charge carriers in field-effect transistors based on metal–oxide–semiconductor structures
   
   Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  254–259
6. Adaptation of the model of tunneling in a metal/CaF$_2$/Si(111) system for use in industrial simulators of MIS devices
   
   Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  266–270