Tyaginov Stanislav Èduardovich

Publications in Math-Net.Ru

1. Impact of the device geometric parameters on hot-carrier degradation in FinFETs
   
   Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1631–1635
2. Analysis of the features of hot-carrier degradation in FinFETs
   
   Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1177–1182
3. Physical principles of self-consistent simulation of the generation of interface states and the transport of hot charge carriers in field-effect transistors based on metal–oxide–semiconductor structures
   
   Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  254–259
4. Adaptation of the model of tunneling in a metal/CaF$_2$/Si(111) system for use in industrial simulators of MIS devices
   
   Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  266–270
5. A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures
   
   Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  675–683